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IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGS4610DPBF, a member of the IRGR4610DPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant G ate C ollector Em itter → Benefits High efficiency in a wide range of.

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IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF C C C C E G C E VCE(on) typ. = 1.
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