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IRGS4607DPBF - Insulated Gate Bipolar Transistor

Features

  • Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter   Benefits High Efficiency in a Wide Range of.

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  VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.
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