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IRGS4607DPBF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGS4607DPBF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGS4607DPBF

Datasheet Details

Part number	IRGS4607DPBF
Manufacturer	International Rectifier
File Size	821.57 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4607DPBF Datasheet
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Features

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter  Benefits High Efficiency in a Wide Range of.

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Published: Feb 16, 2016 |