IRGS4B60KD1PBF - Insulated Gate Bipolar Transistor

International Rectifier

Datasheet Details

Part number	IRGS4B60KD1PBF
Manufacturer	International Rectifier
File Size	434.12 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4B60KD1PBF-InternationalRectifier.pdf

C VCES = 600V.
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharin.

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Published: Feb 16, 2016 |