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IRGS4B60KD1PBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

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IRGS4B60KD1PBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS4B60KD1PBF
Manufacturer	International Rectifier (now Infineon)
File Size	434.12 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4B60KD1PBF Datasheet

Overview

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY.

Key Features

C VCES = 600V.
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharin.

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