IRGS4B60KD1PBF Datasheet, International Rectifier

IRGS4B60KD1PBF transistor equivalent, insulated gate bipolar transistor.

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Features and benefits

C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coeffic.

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International Rectifier

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