IRGS4B60KPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGS4B60KPBF datasheet PDF. This datasheet also includes the IRGB4B60KPBF variant, as both parts are published together in a single manufacturer document.

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IRGS4B60KPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB4B60KPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGS4B60KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	387.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGS4B60KPBF Download (PDF)

Overview

PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current.

More Datasheets from International Rectifier (now Infineon)

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