IRGS4B60KD1PBF Description
PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY.
IRGS4B60KD1PBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- 10µs Short Circuit Capability
- Square RBSOA
- Positive VCE (on) Temperature Coefficient
- Maximum Junction Temperature rated at 175°C
- Lead-Free
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Excellent Current Sharing in Parallel Operation