Datasheet Summary
IRHMS9A97260 (JANSR2N7666T1)
PD-97991
Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Technology
Features
- Single event effect (SEE) hardened (up to LET of 90.5 MeV- cm2/mg)
- Low RDS(on)
- Improved SOA for linear mode operation
- Fast switching
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Electrically isolated
- Ceramic eyelets
- Light weight
- ESD rating: Class 3B per MIL-STD-750, Method 1020
Potential Applications
- DC-DC converter
- Motor drives
- Power distribution
- Latching current limiter
Product Validation
Product Summary
- BVDSS: -200V
- ID : -45A-
- RDS(on), max : 34m
- QG, max: 230nC
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