IRL1104 Datasheet | International Rectifier

.. PD -91805 HEXFET® Power MOSFET Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description q VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB...