IRL1104PbF Datasheet | International Rectifier

escription Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθCS RθJA .irf. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient - 95404 IRL1104Pb F HEXFET® Power MOSFET VDSS = 40V G RDS(on) = 0.008Ω S ID = 104A… TO-220AB Max. 104… 74 416 167 1.1 ±16 340 62 17 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf- in (1.1N- m) Min. - - - -...