IRL1104L Datasheet | International Rectifier

escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for lowprofile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - … Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA .irf. Parameter Junction-to-Case Junction-to-Ambient(PCB Mounted,steady-state)- - PD -91840 IRL1104S/L HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.008Ω ID = 104A† D 2 Pak T O -26 2 Max. 104† 74† 416 2.4 167 1.1 ±16 340 62 17 5.0 -55 to + 175 300 (1.6mm from case ) Typ. - - - - - - Max. 0.9 62 Units W W W/°C V m J A m J...