IRL1104SPBF Overview
l IRL1104SPbF IRL1104LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.008Ω G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient...
IRL1104SPBF Key Features
- Advanced Process Technology
- Surface Mount (IRL1104S)
- Low-profile through-hole (IRL1104L)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated