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IRL1104 - HEXFET Power MOSFET

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q D VDSS = 40V G S RDS(on) = 0.008Ω ID = 104A… Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The TO-220 package is universally preferred for a

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