Datasheet Details
| Part number | IRL1104PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 159.92 KB |
| Description | Power MOSFET |
| Datasheet | IRL1104PbF-InternationalRectifier.pdf |
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Overview: l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.
| Part number | IRL1104PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 159.92 KB |
| Description | Power MOSFET |
| Datasheet | IRL1104PbF-InternationalRectifier.pdf |
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Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
| Part Number | Description |
|---|---|
| IRL1104 | HEXFET Power MOSFET |
| IRL1104L | POWER MOSFET |
| IRL1104LPBF | HEXFET Power MOSFET |
| IRL1104S | POWER MOSFET |
| IRL1104SPBF | HEXFET Power MOSFET |
| IRL1004 | Power MOSFET |
| IRL1004L | Power MOSFET |
| IRL1004LPBF | Power MOSFET |
| IRL1004PBF | Power MOSFET |
| IRL1004S | Power MOSFET |