Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- .4 9 (.6 10) 3 14 .7 3 (.5 80)
5.28 (.208) 4.78 (.188)
3X
0.93 (.037) 0.69 (.027)
0.25 (.010)
M BAM
0.55 (.022) 0.46 (.018)
-B 1.32 (.052) 1.22 (.048)
2.79 (.110) 2.29 (.090)
1.3 9 (.0 5 5) 1.1 4 (.0 4 5)
10.16 (.400) REF. 6.47 (.255) 6.18 (.243)
2.61 (.1 03 ) 2.32 (.0 91 )
8.8 9 (.3 50 ) REF. M IN IM U M R E CO M M E ND E D F O O TP R IN T 11.43 (.450)
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N T.