JANSR2N7389 id=-6.5a) equivalent, transistor p-channel(bvdss=-100v/ rds(on)=0.30ohm/ id=-6.5a).
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Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) H.
such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits i.
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=-100V =0.30ohm =-6.5A
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