Datasheet Details
| Part number | JANSR2N7390 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 125.82 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
 JANSR2N7390 Datasheet
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| Part number | JANSR2N7390 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 125.82 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
JANSR2N7390 Datasheet
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PD - 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard™HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID QPL Part Number -4.0A JANSR2N7390 -4.0A JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
| Part Number | Description |
|---|---|
| JANSR2N7390U | RADIATION HARDENED POWER MOSFET |
| JANSR2N7391 | N-CHANNEL MOSFET |
| JANSR2N7392 | Radiation Hardened Power MOSFET |
| JANSR2N7381 | Radiation Hardened Power MOSFET |
| JANSR2N7389 | Radiation Hardened Power MOSFET |
| JANSR2N7261 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| JANSR2N7262 | Radiation Hardened Power MOSFET |
| JANSR2N7268U | Radiation Hardened Power MOSFET |
| JANSR2N7269U | Radiation Hardened Power MOSFET |
| JANSR2N7425 | POWER MOSFET |