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JANSR2N7397 Datasheet, Intersil Corporation

JANSR2N7397 Datasheet, Intersil Corporation

JANSR2N7397

datasheet Download (Size : 44.99KB)

JANSR2N7397 Datasheet

JANSR2N7397 mosfet

4a/ 250v/ 0.610 ohm/ rad hard/ n-channel power mosfet.

JANSR2N7397

datasheet Download (Size : 44.99KB)

JANSR2N7397 Datasheet

JANSR2N7397 Features and benefits

JANSR2N7397 Features and benefits


* 4A, 250V, rDS(ON) = 0.610Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects -.

JANSR2N7397 Application

JANSR2N7397 Application

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin.

JANSR2N7397 Description

JANSR2N7397 Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev.

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TAGS

JANSR2N7397
250V
0.610
Ohm
Rad
Hard
N-Channel
Power
MOSFET
Intersil Corporation

Manufacturer


Intersil Corporation

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