JANSR2N7399 - 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET

Intersil Corporation

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Datasheet Details

Part number: JANSR2N7399
Manufacturer: Intersil Corporation
File Size: 44.09 KB
Datasheet: JANSR2N7399_IntersilCorporation.pdf
Description: 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7399 Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications..

Features

11A, 100V, rDS(ON) = 0.210Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 1.5nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

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11A 100V 0.210 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation

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