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JANSR2N7398 Datasheet, Intersil Corporation

JANSR2N7398 Datasheet, Intersil Corporation

JANSR2N7398

datasheet Download (Size : 45.05KB)

JANSR2N7398 Datasheet

JANSR2N7398 mosfet equivalent, 2a/ 500v/ 2.50 ohm/ rad hard/ n-channel power mosfet.

JANSR2N7398

datasheet Download (Size : 45.05KB)

JANSR2N7398 Datasheet

Features and benefits


* 2A, 500V, rDS(ON) = 2.50Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - .

Application

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin.

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev.

Image gallery

JANSR2N7398 Page 1 JANSR2N7398 Page 2 JANSR2N7398 Page 3

TAGS

JANSR2N7398
500V
2.50
Ohm
Rad
Hard
N-Channel
Power
MOSFET
Intersil Corporation

Manufacturer


Intersil Corporation

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