Datasheet Details
| Part number | JANSR2N7390U |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 343.26 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
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| Part number | JANSR2N7390U |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 343.26 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
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IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
PD-91804F IRHE9230 JANSR2N7390U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9230 100 kRads(Si) IRHE93230 300 kRads(Si) RDS(on) 0.80 0.80 ID -4.0A -4.
| Part Number | Description |
|---|---|
| JANSR2N7390 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7391 | N-CHANNEL MOSFET |
| JANSR2N7392 | Radiation Hardened Power MOSFET |
| JANSR2N7381 | Radiation Hardened Power MOSFET |
| JANSR2N7389 | Radiation Hardened Power MOSFET |
| JANSR2N7261 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| JANSR2N7262 | Radiation Hardened Power MOSFET |
| JANSR2N7268U | Radiation Hardened Power MOSFET |
| JANSR2N7269U | Radiation Hardened Power MOSFET |
| JANSR2N7425 | POWER MOSFET |