JANSR2N7591U3 Datasheet POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

JANSR2N7591U3 power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	JANSR2N7591U3
Manufacturer	International Rectifier (now Infineon)
File Size	416.65 KB
Description	POWER MOSFET
Datasheet	JANSR2N7591U3 Datasheet

General Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV-cm2/mg.

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.

Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-96923E IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67230 100 kRads(Si) 0.13 16A JANSR2N7591U3 IRHNJ63230 300 kRads(Si) 0.13 16A JANSF2N7591U3 SMD-0.

Key Features

Single Event Effect (SEE) Hardened.
Low RDS(on).
Low Total Gate Charge.
Simple Drive Requ.

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