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JANSR2N7598U3CE Datasheet - International Rectifier

Radiation Hardened Power MOSFET

JANSR2N7598U3CE Features

* Low RDS(on)

* Fast switching

* Single event effect (SEE) hardened

* Low total gate charge

* Simple drive requirements

* Hermetically sealed

* Enhanced ceramic package for direct to pcb mounting

* Light weight

* Surface mount w

JANSR2N7598U3CE General Description

IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 83.6MeV *cm2/mg. Their combination of low RDS(on) and faster .

JANSR2N7598U3CE Datasheet (695.89 KB)

Preview of JANSR2N7598U3CE PDF

Datasheet Details

Part number:

JANSR2N7598U3CE

Manufacturer:

International Rectifier

File Size:

695.89 KB

Description:

Radiation hardened power mosfet.
IRHNKC67C30 (JANSR2N7598U3CE) Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) 600V, 3.4A, N-channel, R6 Technology PD-98006A Fe.

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JANSR2N7598U3CE Radiation Hardened Power MOSFET International Rectifier

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