HGT1S3N60A4DS diode equivalent, 600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.
operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 130.32KB)