HGT1S3N60B3DS diode equivalent, 7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
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