logo

HGTA32N60E2 Datasheet, Intersil Corporation

HGTA32N60E2 Datasheet, Intersil Corporation

HGTA32N60E2

datasheet Download (Size : 31.92KB)

HGTA32N60E2 Datasheet

HGTA32N60E2 igbt

32a/ 600v n-channel igbt.

HGTA32N60E2

datasheet Download (Size : 31.92KB)

HGTA32N60E2 Datasheet

HGTA32N60E2 Features and benefits


* 32A, 600V
* Latch Free Operation
* Typical Fall Time 620ns
* High Input Impedance
* Low Conduction Loss Description The IGBT is a MOS gated high vo.

HGTA32N60E2 Application

operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies an.

HGTA32N60E2 Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-.

Image gallery

HGTA32N60E2 Page 1 HGTA32N60E2 Page 2 HGTA32N60E2 Page 3

TAGS

HGTA32N60E2
32A
600V
N-Channel
IGBT
Intersil Corporation

Manufacturer


Intersil Corporation

Related datasheet

HGT1N30N60A4D

HGT1N40N60A4D

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60B3DS

HGT1S12N60B3S

HGT1S12N60C3

HGT1S12N60C3DS

HGT1S12N60C3S

HGT1S14N36G3VL

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts