HGT1N40N60A4D Datasheet | Fairchild Semiconductor

features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349. Features - 100k Hz Operation At 390V, 22A - 600V Switching SOA Capability - Typical Fall Time - - - . . 55ns at TJ = 125o C - Low Conduction Loss Symbol Ordering Information PART NUMBER HGT1N40N60A4D PACKAGE SOT-227 BRAND 40N60A4D Packaging JEDEC STYLE SOT-227B GATE EMITTER NOTE: When ordering, use the entire part number. TAB (ISOLATED) COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B Absolute Maximum Ratings TC = 25o C, Unless Otherwise Noted HGT1N40N60A4D 600 110 45 300 ±20 ±30 200A at 600V 298 2.3 2500 -55 to 150 1.5 1.7 UNITS V A A A V V W W/o C V o C N-m N-m Collector to Emitter Voltage - - - - - - - - - . BVCES Collector Current Continuous At TC = 25o C - - - - - - - - - - - . . IC25 At TC = 110o C - - -...