Part number:
HGT1S10N120BNS
Manufacturer:
Intersil Corporation
File Size:
81.67 KB
Description:
N-channel igbt.
HGT1S10N120BNS_IntersilCorporation.pdf
Datasheet Details
HGT1S10N120BNS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGT1S10N120BNS_IntersilCorporation.pdf
Datasheet Details
HGT1S10N120BNS
Intersil Corporation
81.67 KB
N-channel igbt.
HGT1S10N120BNS Distributor
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