HGT1S10N120BNS Datasheet, Igbt, Intersil Corporation

HGT1S10N120BNS Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high vol

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HGT1S10N120BNS

Manufacturer:

Intersil Corporation

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81.67kb

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📄 Datasheet

Description:

N-channel igbt.

HGT1S10N120BNS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT1S10N120BNS

Intersil Corporation

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