Part number:
HGT1N30N60A4D
Manufacturer:
Fairchild Semiconductor
File Size:
144.10 KB
Description:
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT1N30N60A4D Features
* of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicat
HGT1N30N60A4D Datasheet (144.10 KB)
Datasheet Details
HGT1N30N60A4D
Fairchild Semiconductor
144.10 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
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