* of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicat
HGT1N30N60A4D Datasheet (144.10 KB)
HGT1N30N60A4D
Fairchild Semiconductor
144.10 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high volt.
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