HGT1N30N60A4D Datasheet - Fairchild Semiconductor

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HGT1N30N60A4D 600V/ SMPS Series N-Channel IGBT

HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt.

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Datasheet Details

Part number:

HGT1N30N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

144.10 KB

Description:

600V/ SMPS Series N-Channel IGBT

Features

* of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicat

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HGT1N30N60A4D 600V SMPS Series N-Channel IGBT Fairchild Semiconductor

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