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HGT1N40N60A4D - N-Channel IGBT

Fairchild Semiconductor

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Datasheet Details

Part number	HGT1N40N60A4D
Manufacturer	Fairchild ↗ Semiconductor
File Size	152.33 KB
Description	N-Channel IGBT
Datasheet	HGT1N40N60A4D_FairchildSemiconductor.pdf

HGT1N40N60A4D Product details

Features

of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |