HGT1N40N60A4D Datasheet, Igbt, Fairchild Semiconductor

HGT1N40N60A4D Features

• Igbt of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state volta

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HGT1N40N60A4D

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Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel igbt.

HGT1N40N60A4D Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGT1N40N60A4D

Fairchild Semiconductor

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