HGT1N30N60A4D diode equivalent, 600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lowe.
operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.
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