of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.

operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016. Featu.

HGTG20N60B3

HGTG20N60A4

HGTG20N60A4D

HGTG20N60C3

HGTG20N60C3D

HGTG20N60C3R

HGTG20N100D2

HGTG20N120

HGTG20N120C3D

HGTG20N120CN

HGTG20N120CND

HGTG20N120E2

HGTG20N50C1D