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RFP12P10 - P-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 12A, 80V and 100V.
  • rDS(ON) = 0.300Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP12P08 RFP12P10.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFP12P08 P-Channel Power MOSFET
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RFP12N10 N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFP12P08, RFP12P10 Data Sheet June 1999 File Number 1495.2 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511. Features • 12A, 80V and 100V • rDS(ON) = 0.