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Isahaya Electronics

RT3CLLM Datasheet Preview

RT3CLLM Datasheet

Compound Transistor

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PRELIMINARY
RT3CLLM
Compound Transistor
For Low Frequency Amplify Application
Silicon Npn Epitaxial Type
DESCRIPTION
RT3CLLM is a compound transistor built with two
2SC3052 chips in SC-88 package.
FEATURE
Silicon npn epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
For low frequency amplify application
OUTLINE DRAWING
2.1
1.25
Unitmm
TERMINAL
CONNECTOR
①:EMITTER1
Tr1 ②:BASE1
③:COLLECTOR2
Tr2 ④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL
VCBO
VEBO
VCEO
IC
PCTotal
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipationTa=25℃)
Junction temperature
Storage temperature
RATING
50
6
50
200
150
125
-55~+125
UNIT
V
V
V
mA
mW
MARKING
6 54
.C L L
123
ISAHAYA ELECTRONICS CORPORATION




Isahaya Electronics

RT3CLLM Datasheet Preview

RT3CLLM Datasheet

Compound Transistor

No Preview Available !

PRELIMINARY
RT3CLLM
Compound Transistor
For Low Frequency Amplify Application
Silicon Npn Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol
Parameter
V(BR)CEO
ICBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
* : It shows hFE classification in right table.
Test conditions
IC=100μA,RBE=
VCB =50V,IE=0
VEB=6V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA,IB=10mA
VCE=6V,IE=-10mA
VCB=6V,IE=0,f=1MHZ
VCE=6V,IE=-0.1mA,f=1kHZ,RG=2kΩ
Min
50
-
-
150
90
-
-
-
-
Item E
hFE 150~300
Limits
Typ
-
-
-
-
-
-
200
2.5
-
Max
-
0.1
0.1
800
-
0.3
-
-
15
Unit
V
μA
μA
-
-
V
MHZ
pF
dB
F
250~500
G
400~800
ISAHAYA ELECTRONICS CORPORATION


Part Number RT3CLLM
Description Compound Transistor
Maker Isahaya Electronics
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