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JCET

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-Channel MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V(BR)DSS
 9
N-Channel MOSFET
RDS(on)MAX
ȍ#9
ȍ#9
ID
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE
z High density cell design for Low RDS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected
M$5.,1*
APPLICATION
z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV
z '&'& &RQYHUWHU
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
Symbol
VDS
V*S
ID
IDM
PD
Tj
Tstg
RșJA
Parameter
Drain-Source Voltage
*DWH-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance from Junction to Ambient
Value
60
±0
340
800
0.2
150
-55~+150
625
Unit
V
V
mA
mA
W
Я
Я
Я/W
ZZZFMHOHFFRP

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JCET

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-Channel MOSFET

No Preview Available !

026)(7 (/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source Breakdown Voltage
V (BR) DSS VGS = 0V, ID =250μA
GateThreshold Voltage (note 2)
VGS(th)
VDS =VGS, ID =1mA
Zero Gate Voltage Drain Current
IDSS VDS =48V,VGS = 0V
Gate-Source Leakage Current
IGSS VGS =±20V, VDS = 0V
Drain-Source On-Resistance (note 2)
RDS(on)
VGS =4.5V, ID =200mA
VGS =10V, ID =500mA
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS(note 3)
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
Turn-on Delay Time
Turn-off Delay Time
td(on)
td(off)
VGS=10V,VDD=50V, RG=50ȍ
RGS=50ȍ, RL=250ȍ
Reverse Recovery Time
VGS=0V,IS=300mA,VR=25V,
trr
dIs/dt=-100A/us
Recovered Charge
VGS=0V,IS=300mA,VR=25V
Qr
dIs/dt=-100A/us
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
DRAIN-SOURCE DIODE
BVGSO Igs=f1mA(Open Drain)
Diode Forward Voltage(note 2)
VSD IS=300mA, VGS = 0V
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current(note1)
ISM
Notes :
1. Repetitive rating˖Pluse width limited by junction temperature.
2. Pulse Test : Pulse width”300μs, duty cycle”%.
3. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
60 V
1 1.3  V
1 μA
±10 μA
1.1 5.3
Ÿ
0.9 5
Ÿ
40 pF
30 pF
10 pF
10 ns
15 ns
30 ns
30 nC
f21.5
f30
V
1.5 V
0.2 A
0.53 A
ZZZFMHOHFFRP

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Part Number 2N7002KW
Description N-Channel MOSFET
Maker JCET
PDF Download

2N7002KW Datasheet PDF






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