2N7002KW — N-Channel Enhancement Mode Field Effe.
Fairchild Semiconductor
2N7002KW - N-channel MOSFET
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-.
Pan Jit International
2N7002KW - N-channel MOSFET
2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Tr.
Unisonic Technologies
2N7002KW - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002KW uses advanced technology to prov.
LRC
L2N7002KWT1G - Small Signal MOSFET
L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance .
LRC
S-L2N7002KWT1G - Small Signal MOSFET
L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance .
ON Semiconductor
2N7002KW - N-Channel FET
2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast.
SeCoS
2N7002KW - N-channel MOSFET
Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spe.
JCET
2N7002KW - N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS 9 N-Channel MOSFET RDS(on)MAX ȍ#9 .
Matsuki
ME2N7002KW - Dual N-Channel MOSFET
ME2N7002KW Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION FEATURES The ME2N7002KW is the Dual N-Channel logic enh.
MCC
2N7002KW - N-Channel FET
MCC R Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
PAN JIT
2N7002KW-AU - 60V N-Channel MOSFET
P2N7002KW-AU 60V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 60 V Current 250mA SOT-323 Features RDS(ON), VGS@10V, ID@500mA<3Ω .