2SB1386 - PNP Transistor

Features

z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2.

JCET

Datasheet Details

Part number	2SB1386
Manufacturer	JCET
File Size	354.01 KB
Description	PNP Transistor
Datasheet	2SB1386 Datasheet
Additional preview pages of the 2SB1386 datasheet.

📁 Similar Datasheet

2SB1386 - Low Frequency Transistor (Rohm)
2SB1386 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SB1386 - PNP Silicon Epitaxial Planar Transistor (GME)
2SB1386 - PNP GENERAL PURPOSE TRANSISTORS (Power Silicon)
2SB1386 - PNP Transistor (HOTTECH)
2SB1386 - Epitaxial Planar Transistor (Weitron Technology)
2SB1386 - LOW FREQUENCY PNP TRANSISTOR (UTC)
2SB1386 - SOT-89 Plastic-Encapsulate Transistors (WILLAS)
2SB1386 - Low Frequency Transistor (KEXIN)
2SB1386 - PNP Silicon Low Frequency Transistor (SeCoS)

Other Datasheets by JCET

2SB1132 - PNP Transistor
2SB1184 - PNP Transistor
2SB1189 - PNP Transistor
2SB1197 - PNP Transistor
2SB1260 - PNP Transistor
2SB1261 - PNP Transistor
2SB1426 - PNP Transistor
2SB1658 - PNP Transistor

Full PDF Text Transcription

Click to expand full text

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Continuous Collector Current -5 A ICP* Pulsed Collector Current -10 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 0.

Published: Aug 5, 2017 |