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2SB1386 Datasheet PDF

Weitron Technology 2SB1386

Epitaxial Planar Transistor

Part No. 2SB1386
Datasheet 2SB1386 Download
Manufacturer
Weitron Technology
Description Epitaxial Planar Transistor
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2SB1386 datasheet page 1 preview

MAXIMUM RATINGS

(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD Value 150 0.5 833 -55 to +150 Unit mW mW/ C C/W C R θJA TJ,Tstg Device Marking 2SB1386=

ELECTRICAL CHARACTERISTICS

Characteristics Collector-Emitter Breakdown Voltage(I C =-1 mAdc, IB =0) Collector-Base Breakdown Voltage(I C =-50 uAdc, I E =0) Emitter-Base Breakdown Voltage(IE =-50 uAdc, I C =0) Collector Cufoff Current(V CB =-20Vdc, I E =0) Emitter Cufoff Current(VEB =-5Vdc, IC =0) 1. FR-5=1.0 I I0.75 I I0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -20 -30 -6.0 Max -0.5 -0.5 Unit Vdc Vdc Vdc uAdc uAdc WEITRON 2SB1386

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued) Chara...
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