Weitron Technology 2SB1386
Epitaxial Planar Transistor
MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD Value 150 0.5 833 -55 to +150 Unit mW mW/ C C/W C R θJA TJ,Tstg Device Marking 2SB1386=ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage(I C =-1 mAdc, IB =0) Collector-Base Breakdown Voltage(I C =-50 uAdc, I E =0) Emitter-Base Breakdown Voltage(IE =-50 uAdc, I C =0) Collector Cufoff Current(V CB =-20Vdc, I E =0) Emitter Cufoff Current(VEB =-5Vdc, IC =0) 1. FR-5=1.0 I I0.75 I I0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -20 -30 -6.0 Max -0.5 -0.5 Unit Vdc Vdc Vdc uAdc uAdc WEITRON 2SB1386ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Chara...