Unisonic Technologies 2SB1386
LOW FREQUENCY PNP TRANSISTOR
| Part No. | 2SB1386 |
|---|---|
| Datasheet | 2SB1386 Download |
| Manufacturer |  Unisonic Technologies |
| Description | LOW FREQUENCY PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)● ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-019.D 2SB1386 PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
( TA=25C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) IC(DC) -5 A Collector Current (Pulse) (Note2) IC(PULSE) -10 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10...
