Full PDF Text Transcription for 2SD2118 (Reference)
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2SD2118. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR (NPN) FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/...
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TRANSISTOR (NPN) FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current Gain Characteristics. TO-251-3L 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 20 6 5 1 150 -55-150 Unit V V V A W ℃ ℃ 3.
2SD2118 Datasheet
