2N5401
FEATURES
High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50n A(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50m A, IB=-5m A Low Noise : NF=8d B (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Ta=25 ) Collector Power Dissipation
(Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB
Tj Tstg
RATING -160 -150 -5 -600 -100
150 -55 150
UNIT V V V m A m A m W
EPITAXIAL PLANAR PNP TRANSISTOR
KE G
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
1997. 5. 13
Revision No : 0
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ELECTRICAL CHARACTERISTICS...
