Datasheet4U Logo Datasheet4U.com

2N5550S - EPITAXIAL PLANAR NPN TRANSISTOR

2N5550S Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

2N5550S Features

* High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max. ) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max. ) IC=50mA, IB=5mA Low Noise : NF=10dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 160 Collector-Emit

📥 Download Datasheet

Preview of 2N5550S PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N5550S
Manufacturer
KEC
File Size
31.54 KB
Datasheet
2N5550S-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

📁 Related Datasheet

  • 2N5550 - Amplifier Transistor (ON Semiconductor)
  • 2N555 - PNP germanium power transistors (Motorola)
  • 2N5551 - Silicon NPN Transistor (NTE)
  • 2N5551BU - NPN Amplifier (ON Semiconductor)
  • 2N5551HR - Hi-Rel NPN bipolar transistor (STMicroelectronics)
  • 2N5551TA - NPN Amplifier (ON Semiconductor)
  • 2N5551TF - NPN Amplifier (ON Semiconductor)
  • 2N5552 - NPN Transistor (SSDI)

📌 All Tags

EPITAXIAL PLANAR NPN TRANSISTOR KEC
KEC 2N5550S-like datasheet