Datasheet4U Logo Datasheet4U.com

2N5550S Datasheet - KEC

EPITAXIAL PLANAR NPN TRANSISTOR

2N5550S Features

* High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA Low Noise : NF=10dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 160 Collector-Emit

2N5550S Datasheet (31.54 KB)

Preview of 2N5550S PDF

Datasheet Details

Part number:

2N5550S

Manufacturer:

KEC

File Size:

31.54 KB

Description:

Epitaxial planar npn transistor.

📁 Related Datasheet

2N5550 Amplifier Transistor (ON Semiconductor)

2N5550 Silicon NPN Transistor (NTE)

2N5550 Amplifier Transistors (Motorola)

2N5550 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

2N5550 NPN high-voltage transistors (Philips)

2N5550 SILICON NPN TRANSISTORS (CENTRAL SEMICONDUCTOR)

2N5550 NPN Transistor (SeCoS)

2N5550 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

2N555 PNP germanium power transistors (Motorola)

2N5551 Silicon NPN Transistor (NTE)

TAGS

2N5550S EPITAXIAL PLANAR NPN TRANSISTOR KEC

Image Gallery

2N5550S Datasheet Preview Page 2

2N5550S Distributor