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KDS121E - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • °.
  • Small Package °.
  • Low Forward Voltage °.
  • Fast Reverse Recovery Time °.
  • Small Total Capacitance : ESM. : VF=0.9V (Typ. ). : trr=1.6ns(Typ. ). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ. ).

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Datasheet Details

Part number KDS121E
Manufacturer KEC
File Size 189.10 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS121E Datasheet

Full PDF Text Transcription for KDS121E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KDS121E. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KDS121E SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward V...

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PEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward Voltage °§ Fast Reverse Recovery Time °§ Small Total Capacitance : ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 + CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -5