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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT V V mA mA A mW
A G H K
KDS123V
SILICON EPITAXIAL PLANAR DIODE
E B
JD
2 DIM MILLIMETERS A 1.2 +_0.05
B 0.8 +_0.05 1 3 C 0.5 +_ 0.05
D 0.3 +_ 0.05 E 1.2 +_ 0.05 G 0.8 +_ 0.05
PP
H 0.40 J 0.12+_ 0.05 K 0.2 +_ 0.05
P5
1. CATHODE 2 2.
KDS123V Datasheet
