KDS135
KDS135 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
Features
ᴌHigh Reliability. ᴌSmall surface mounting type (USC).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10m S)
IFSM
Power Dissipation
Junction Temperature
Tj
Storage Temperature Range
Tstg
- Mounted on a glass epoxy cirvuit board of 20ᴧ20mm Pad dimension of 4ᴧ4mm
RATING 300 250 300 100 2 150- 150
-55ᴕ150
UNIT V V m A m A A m W ᴱ ᴱ
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
B 1
2 D
MM 1. ANODE 2. CATHODE
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
ELECTRICAL CHARACTERISTICS...
