SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : USC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
VRM
VR
IFM
IO
IFSM
PD *
Tj
Tstg
85
80
300
100
2
200
150
-55 150
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDS160
SILICON EPITAXIAL PLANAR DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50 +_ 0.1
B 1.25+_ 0.05
C 0.90 +_0.05
D 0.30+0.06/-0.04
E 1.70 +_ 0.05
F MIN 0.17
G 0.126 +_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15 +_0.05
K 0.4 +_0.05
L 2 +4/-2
M 4~6
USC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR
CT
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0V, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
A
pF
nS
2003. 11. 20
Revision No : 5
1/2
