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KDS160E - Silicon Diode

Key Features

  • Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU.

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Datasheet Details

Part number KDS160E
Manufacturer KEC
File Size 42.59 KB
Description Silicon Diode
Datasheet download datasheet KDS160E Datasheet

Full PDF Text Transcription for KDS160E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KDS160E. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. KDS160E SILICON EPITAXIAL PLANAR DIODE FEATURES Small Package : ESC. Low Forward Voltage. Fast Revers...

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R DIODE FEATURES Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) VRM VR IFM IO IFSM 85 80 300 100 2 Power Dissipation PD* 150 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. UNIT V V mA mA A mW CATHODE MARK B A GG C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C

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