KDV147 Datasheet PDF

FEATURES

Low rS : rS=0.3 (Typ.). Small Package.

MAXIMUM RATINGS

(Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V CLASSIPICATION OF CAPACITANCE GRADE GRADE CAPACITANCE (C2V) UNIT A 34.0 35.5 B 35.0 36.5 C 36.0 37.5 pF D 37.0 38.5 E 38.0 39.5 J K D KDV147 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE B F A HM C EE 1 2 3N L 1. ANODE 1 2. CATHODE 1, 2 3. ANODE 2 G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 1 23 TO-92M

ELECTRICAL CHARACTERISTICS

(Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance Capacitance Ratio VR IR C2V C8V C2V/C8V Series Resistance Note : rS test circuit rS TEST CONDITION IR=10 A VR=15V VR=2V, f=1MHz VR=8V, f=1MHz C=30pF, f=50MHz MIN. 15 34.0 11.7 2.7 - TYP. - 2.95 0.3 MAX. 50 39.5 13.7 3.2 0.5 UNIT V nA pF 1996. 11. 16 Revision No : 1 1/2 KDV147 1996.