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KEC

KDV365F Datasheet Preview

KDV365F Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
Good C-V Linearity.
Low Series Resistance.
Small Package : TFSC.
KDV365F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
15
150
-55 150
UNIT
V
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
IR1
IR2
C1V
C4V
C1V/C4V
rS
ESD Capability *
* Failure criterion : IR 20nA at VR=10V.
TEST CONDITION
VR=10V
VR=10V, Ta=60
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=4V, f=100MHz
C=200pF, R=0 , Both forward and
reverse direction 1 pulse.
MIN.
-
-
27.05
6.05
3.0
-
TYP.
-
-
-
-
-
-
MAX.
10
100
28.55
7.55
-
1.5
UNIT
nA
pF
-
200 -
-
2004. 10. 6
Revision No : 0
1/2




KEC

KDV365F Datasheet Preview

KDV365F Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV365F
-12
10
IR - VR
-13
10
0
4 8 12
REVERSE VOLTAGE VR (V)
16
C T - VR
30
f=1MHz
25
20
15
10
5
0
1 10 30
REVERSE VOLTAGE VR (V)
2004. 10. 6
Revision No : 0
2/2


Part Number KDV365F
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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