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SEMICONDUCTOR
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TV Tuning. FEATURES
Low Series Resistance : rs=1.1 (Max.) Small Package : ESC.
KDV310E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
CATHODE MARK
High Capacitance Ratio : C2V/C25V=17.0(Min.)
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 34 150 -55 150 UNIT V
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
Marking
Type Name
VD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current SYMBOL IR1 IR2 C2V C25V C2V/C25V rS VR=32V VR=32V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz TEST CONDITION MIN. 47.0 2.65 17.0 TYP.
KDV310E Datasheet
