• Part: KDV350
  • Description: VARIABLE CAPACITANCE DIODE
  • Manufacturer: KEC
  • Size: 361.77 KB
Download KDV350 Datasheet PDF
KDV350 page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA VCO. Features Low Series Resistance : rS=0.50 (Max.) Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K B 1 2 D MM 1. ANODE 2. CATHODE DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance C1V...