• Part: KDV350E
  • Description: Silicon Diode
  • Manufacturer: KEC
  • Size: 345.68 KB
Download KDV350E Datasheet PDF
KDV350E page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA VCO. Features Low Series Resistance : rS=0.50 (Max.) Small Package. (ESC Package) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CE 1 CATHODE MARK B A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V 2 D 1. ANODE 2. CATHODE DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C1V C4V Capacitance Ratio Series Resistance...